Insulator-to-Superconductor Transition upon Electron Doping in a BiS2-Based Superconductor Sr1−xLaxFBiS2
نویسندگان
چکیده
منابع مشابه
The Superconductor Insulator Transition
As the thickness or magnetic field is varied in thin films a transition between superconducting and insulating phases takes place. This quantum phase transition obeys scaling relations and occurs at seemingly universal critical resistance. This paper reviews experiments that demonstrate this transition and measure the critical exponents. The microscopic theories are outlined and lead to differe...
متن کاملCompensation-driven superconductor-insulator transition
The superconductor-insulator transition in the presence of strong compensation of dopants was recently realized in La doped yttrium barium copper oxide. The compensation of acceptors by donors makes it possible to change independently the concentration of holes n and the total concentration of charged impurities N. We propose a theory of the superconductor-insulator phase diagram in the N ,n pl...
متن کاملPhase diagram of electron systems near the superconductor-insulator transition.
The zero temperature phase diagram of Cooper pairs exposed to disorder and a magnetic field is determined theoretically from a variational approach. Four distinct phases are found: a Bose and a Fermi insulating, a metallic, and a superconducting phase, respectively. The results explain the giant negative magnetoresistance found experimentally in In-O, TiN, Be and high-T(c) materials.
متن کاملSharp superconductor-insulator transition in short wires.
Recent experiments on short MoGe nanowires show a sharp superconducting-insulating transition at the universal resistance R(Q)=h/(4e(2)), contrary to the expectation of a smooth temperature dependence of the resistance for such Josephson-like systems. We present a self-consistent renormalization-group treatment of interacting quantum phase slips in short superconducting wires, which reproduces ...
متن کاملSuperconductor-insulator transition in long MoGe nanowires.
The properties of one-dimensional superconducting wires depend on physical processes with different characteristic lengths. To identify the process dominant in the critical regime we have studied the transport properties of very narrow (9-20 nm) MoGe wires fabricated by advanced electron-beam lithography in a wide range of lengths, 1-25 μm. We observed that the wires undergo a superconductor-i...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Physical Society of Japan
سال: 2014
ISSN: 0031-9015,1347-4073
DOI: 10.7566/jpsj.83.014709